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DMN6068LK3
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Drain-Source voltage
Characteristic
Symbol
V DSS
Value
60
Unit
V
Gate-Source voltage
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
(Note 5)
(Note 11)
(Note 11)
V GS
E AS
I AS
± 20
37.5
5.0
V
mJ
A
(Note 7)
8.5
Continuous Drain current
V GS = 10V
T A = 70 ° C (Note 7)
I D
6.8
A
(Note 6)
6.0
Pulsed Drain current
V GS = 10V
(Note 8)
I DM
22.2
A
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 7)
(Note 8)
I S
I SM
10.2
22.2
A
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
(Note 6)
Symbol
Value
4.12
33
Unit
Power dissipation
Linear derating factor
(Note 7)
P D
8.49
67.9
W
mW/ ° C
(Note 9)
(Note 6)
2.12
16.9
30.3
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
(Note 7)
(Note 9)
(Note 10)
R θ JA
R θ JL
T J , T STG
14.7
59.0
3.09
-55 to +150
° C/W
° C
Notes:
5. AEC-Q101 V GS maximum is ±16V.
6. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as note 2, except the device is measured at t ≤ 10 sec.
8. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 μs. The pulse current is limited by the maximum junction temperature.
9. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
10. Thermal resistance from junction to solder-point (at the end of the drain lead).
11. UIS in production with L = 3.0mH, I AS = 5.0A, R G = 25? , V DD = 50V, starting T J = 25°C
DMN6068LK3
Document Number DS32057 Rev 4 - 2
2 of 8
www.diodes.com
May 2013
? Diodes Incorporated
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